The relentless drive towards greater efficiency and power density in automotive and industrial power systems demands constant semiconductor innovation. Addressing this challenge head-on, Infineon Technologies AG, a global powerhouse in power systems and IoT semiconductors, has unveiled its groundbreaking CoolSiC™ MOSFET 750 V G2. This next-generation silicon carbide (SiC) technology isn't just an incremental update; it represents a significant leap forward, engineered to deliver unparalleled performance across a vast spectrum of demanding applications.
Source from Infineon
Engineered for Peak Performance: Core Specifications and Advantages
At the heart of the CoolSiC™ MOSFET 750 V G2 lies its exceptional electrical characteristics, meticulously designed to minimize losses and maximize output:
• Ultra-Low On-Resistance (R DS(on)): Offering a finely tuned portfolio ranging from 4 mΩ to 60 mΩ at 25°C, these devices drastically reduce conduction losses. The standout 4 mΩ and 7 mΩ variants are particularly transformative for static switching applications, establishing themselves as the ideal choice for eFuses, high-voltage battery disconnect switches (HVD), solid-state circuit breakers (SSCB), and solid-state relays (SSR).
• Superior Switching Performance: Infineon's G2 technology boasts industry-leading figures of merit:
Low R DS(on) x Q OSS: Minimizes turn-on losses in hard-switching topologies.
Improved R DS(on) x Q fr: Reduces losses in resonant and soft-switching applications.
Reduced Gate Charge (Q G): Enables significantly faster switching speeds and lower gate drive losses, unlocking higher operating frequencies crucial for compact designs.
• Enhanced Robustness and Design Flexibility:
High Threshold Voltage (V GS(th),typ = 4.5 V @ 25°C): Combined with an ultra-low Q GD/Q GS ratio, this provides exceptional immunity against parasitic turn-on (PTO), a critical reliability factor.
Extended Gate Robustness: Supports gate drive voltage swings down to -7 V DC and can withstand transient spikes down to -11 V, offering engineers significantly greater design margin and ensuring superior compatibility with diverse gate drivers on the market.
Revolutionary Packaging: Unlocking Thermal Potential
Performance isn't just about silicon. Infineon complements the advanced SiC technology with its innovative Q-DPAK Top-Side Cooling (TSC) package. This packaging breakthrough is specifically engineered to address thermal management bottlenecks:
• Industry-Leading Thermal Performance: The top-side cooling design provides an optimal thermal path away from the heat-generating chip, significantly lowering thermal resistance (R th(j-top)).
• Unmatched Power Density: The Q-DPAK TSC package enables efficient heat extraction directly from the top surface, allowing the 4 mΩ R DS(on) device to achieve best-in-class specifications and facilitating unprecedented power density in space-constrained applications.
• Enhanced Reliability: Superior thermal management directly translates to lower operating junction temperatures, a key factor in extending product lifetime and ensuring long-term system reliability.
Driving Innovation Across Automotive and Industrial Sectors
The CoolSiC™ MOSFET 750 V G2's blend of ultra-low losses, high switching speed, robust packaging, and enhanced ruggedness makes it a versatile powerhouse for next-generation power conversion:
• Electric & Hybrid Vehicles (xEV):
On-Board Chargers (OBC): Achieve faster charging times and higher efficiency.
DC-DC Converters: Power auxiliary systems more efficiently.
High-Voltage Auxiliaries: Reliably manage power for pumps, compressors, and heaters.
Solid-State Protection: Implement robust eFuses and battery disconnect switches (HVD).
• Industrial & Renewable Energy:
EV Charging Stations (DC Fast Chargers): Enable faster, cooler, and more reliable charging infrastructure.
Solar Photovoltaic (PV) Inverters: Maximize energy harvest by minimizing conversion losses.
Energy Storage Systems (ESS): Improve efficiency in bi-directional battery power flow.
Industrial SMPS (Switched-Mode Power Supplies): Build smaller, more efficient power supplies for servers, telecom, and automation.
Motor Drives: Enhance efficiency and control in industrial motors.
Solid-State Relays & Circuit Breakers: Enable faster, wear-free switching for industrial control.
Meeting Stringent Standards for Demanding Environments
Infineon understands that performance must be matched by unwavering reliability, especially in safety-critical applications. The CoolSiC™ MOSFET 750 V G2 is rigorously qualified to the highest industry standards:
• Automotive Grade: Fully compliant with the AEC-Q101 standard, guaranteeing reliability under the harsh conditions of automotive environments.
• Industrial Grade: Meets all relevant JEDEC standards for industrial component reliability, ensuring long-term operation in demanding settings.
This dual certification underscores Infineon's commitment to providing components that designers can trust for applications where failure is not an option.
Conclusion: Setting a New Standard for SiC Power Conversion
Infineon's CoolSiC™ MOSFET 750 V G2 is more than just a new component; it's a catalyst for innovation. By delivering:
• Unprecedented Efficiency: Through ultra-low R DS(on) and optimized switching figures of merit.
• Exceptional Power Density: Enabled by the revolutionary Q-DPAK TSC package and high-frequency capability.
• Enhanced Robustness: Featuring high threshold voltage, superior PTO immunity, and extended gate voltage tolerance.
• Proven Reliability: Backed by AEC-Q101 and JEDEC qualifications.
Infineon empowers engineers to push the boundaries of what's possible in automotive electrification and industrial power systems. This technology directly addresses the escalating market demands for solutions that are simultaneously more efficient, more compact, and more cost-effective over the system’s lifetime. The CoolSiC™ MOSFET 750 V G2 stands as a testament to Infineon's leadership in SiC technology and its dedication to shaping a more efficient, electrified future. Designers seeking to build the next generation of high-performance power converters now have a superior SiC MOSFET platform at their disposal.