• Fairchild Semiconductor
• IRFW730BTMNL
• Discrete Semiconductor Products
• N-CHANNEL POWER MOSFET
•  IRFW730BTMNL Datasheet
• 

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• AttributesAttribute Value
• ManufacturerFairchild Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesBulk
• Standard Quantity468
• DescriptionN-Channel 400 V 5.5A (Tc) 3.13W (Ta), 73W (Tc) Surface Mount D2PAK
• Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
• Rds On (Max) @ Id, Vgs1Ohm @ 2.75A, 10V
• Power Dissipation (Max)3.13W (Ta), 73W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageD2PAK
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)400 V
• Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 25 V

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