• Fairchild Semiconductor
• SSW2N60BTM
• Discrete Semiconductor Products
• N-CHANNEL POWER MOSFET
•  SSW2N60BTM Datasheet
• 

• Cost Reduction
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• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerFairchild Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesBulk
• Standard Quantity650
• DescriptionN-Channel 600 V 2A (Tc) 3.13W (Ta), 54W (Tc) Surface Mount D2PAK
• Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C2A (Tc)
• Rds On (Max) @ Id, Vgs5Ohm @ 1A, 10V
• Power Dissipation (Max)3.13W (Ta), 54W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageD2PAK
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V

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• QC PROCESS
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