• Fairchild Semiconductor
• SSU2N60BTU
• Discrete Semiconductor Products
• N-CHANNEL POWER MOSFET
•  SSU2N60BTU Datasheet
• 

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• AttributesAttribute Value
• ManufacturerFairchild Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesBulk
• Standard Quantity952
• DescriptionN-Channel 600 V 1.8A (Tc) 2.5W (Ta), 44W (Tc) Through Hole IPAK
• Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
• Rds On (Max) @ Id, Vgs5Ohm @ 900mA, 10V
• Power Dissipation (Max)2.5W (Ta), 44W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageIPAK
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V

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