• Fairchild Semiconductor
• SSI4N60BTU
• Discrete Semiconductor Products
• N-CHANNEL POWER MOSFET
•  SSI4N60BTU Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerFairchild Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesBulk
• Standard Quantity634
• DescriptionN-Channel 600 V 4A (Tc) 3.13W (Ta), 100W (Tc) Through Hole TO-262 (I2PAK)
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C4A (Tc)
• Rds On (Max) @ Id, Vgs2.5Ohm @ 2A, 10V
• Power Dissipation (Max)3.13W (Ta), 100W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-262 (I2PAK)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds920 pF @ 25 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT