• Fairchild Semiconductor
• FDB86102LZ
• Discrete Semiconductor Products
• POWER FIELD-EFFECT TRANSISTOR, 8
•  FDB86102LZ Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerFairchild Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesBulk
• Standard Quantity345
• DescriptionN-Channel 100 V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount TO-263 (D2PAK)
• Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C8.3A (Ta), 30A (Tc)
• Rds On (Max) @ Id, Vgs24mOhm @ 8.3A, 10V
• Power Dissipation (Max)3.1W (Ta)
• Vgs(th) (Max) @ Id3V @ 250µA
• Supplier Device PackageTO-263 (D2PAK)
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1275 pF @ 50 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT