• Fairchild Semiconductor
• FDD6612A
• Discrete Semiconductor Products
• POWER FIELD-EFFECT TRANSISTOR, 9
•  FDD6612A Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerFairchild Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesBulk
• Standard Quantity598
• DescriptionN-Channel 30 V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount TO-252 (DPAK)
• Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 30A (Tc)
• Rds On (Max) @ Id, Vgs20mOhm @ 9.5A, 10V
• Power Dissipation (Max)2.8W (Ta), 36W (Tc)
• Vgs(th) (Max) @ Id3V @ 250µA
• Supplier Device PackageTO-252 (DPAK)
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)30 V
• Gate Charge (Qg) (Max) @ Vgs9.4 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds660 pF @ 15 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT