• GeneSiC Semiconductor
• G3R350MT12J-TR
• Discrete Semiconductor Products
• 1200V 350M TO-263-7 G3R SIC MOSF
•  G3R350MT12J-TR Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerGeneSiC Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity800
• DescriptionN-Channel 1200 V 10A (Tc) 64W (Tc) Surface Mount TO-263-7
• Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologySiC (Silicon Carbide Junction Transistor)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C10A (Tc)
• Rds On (Max) @ Id, Vgs395mOhm @ 4A, 18V
• Power Dissipation (Max)64W (Tc)
• Vgs(th) (Max) @ Id2.7V @ 2mA
• Supplier Device PackageTO-263-7
• Drive Voltage (Max Rds On, Min Rds On)15V, 18V
• Vgs (Max)+22V, -10V
• Drain to Source Voltage (Vdss)1200 V
• Gate Charge (Qg) (Max) @ Vgs10 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds331 pF @ 800 V

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• QUOTE
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• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
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