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  • GeneSiC Semiconductor
  • 1N8032-GA
  • Discrete Semiconductor Products
  • DIODE SIL CARB 650V 2.5A TO257
  •  1N8032-GA Datasheet
  • Cost Reduction
  • Min Order From 1 PCS
  • 365 Days Warranty
  • 12 Hours Quotation
Product Specifications
  • AttributesAttribute Value
  • ManufacturerGeneSiC Semiconductor
  • CategoryDiscrete Semiconductor Products
  • PackagesTube
  • Standard Quantity10
  • DescriptionDiode 650 V 2.5A Through Hole TO-257
  • Package / CaseTO-257-3
  • Mounting TypeThrough Hole
  • SpeedNo Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr)0 ns
  • TechnologySiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F274pF @ 1V, 1MHz
  • Current - Average Rectified (Io)2.5A
  • Supplier Device PackageTO-257
  • Operating Temperature - Junction-55°C ~ 250°C
  • Voltage - DC Reverse (Vr) (Max)650 V
  • Voltage - Forward (Vf) (Max) @ If1.3 V @ 2.5 A
  • Current - Reverse Leakage @ Vr5 µA @ 650 V

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Quality and Reliability

We supply 100% original and brand-new 1N8032-GA from GeneSiC Semiconductor only.

Hard Find Electronics Tech Limited is committed to achieving the highest levels of quality to meet and exceed customer requirements. We have built a network of trusted suppliers and assembled a team of experienced professionals to serve our customers better. Our rigorous 3-step quality control process ensures that you receive the best possible service and products. All components supplied by us come with a 365-day quality warranty, guaranteeing your satisfaction and confidence in our products.

Order Guide
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  • QUOTE
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  • QC PROCESS
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MORECustomer Reviews
  • Al***el 
    Fast delivery,good service, thank you.
  • A***a 
    Danke fuer schnelle Lieferung
  • An***as 
    Dear,it looks good! and thanks for offering great service and fast delivery. Let's see what new project we could cooperate!
  • Re***tz 
    every things ok!!!
  • Ch***ph 
    Received today, so fast! Thank you.

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