• Intersil (Renesas Electronics Corporation)
• NP35N055YUK-E1-AY
• Discrete Semiconductor Products
• MOSFET N-CH 55V 35A 8HSON
•  NP35N055YUK-E1-AY Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIntersil (Renesas Electronics Corporation)
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity2500
• DescriptionN-Channel 55 V 35A (Tc) 1W (Ta), 97W (Tc) Surface Mount 8-HSON (5x5.4)
• Package / Case8-PowerLDFN
• Mounting TypeSurface Mount
• Operating Temperature175°C
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C35A (Tc)
• Rds On (Max) @ Id, Vgs6.7mOhm @ 18A, 10V
• Power Dissipation (Max)1W (Ta), 97W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device Package8-HSON (5x5.4)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)55 V
• Gate Charge (Qg) (Max) @ Vgs57 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds3360 pF @ 25 V

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• QUOTE
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• QC PROCESS
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