• Intersil (Renesas Electronics Corporation)
• NP83P06PDG-E1-AY
• Discrete Semiconductor Products
• MOSFET P-CH 60V 83A TO263
•  NP83P06PDG-E1-AY Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIntersil (Renesas Electronics Corporation)
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity800
• DescriptionP-Channel 60 V 83A (Tc) 1.8W (Ta), 150W (Tc) Surface Mount TO-263
• Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting TypeSurface Mount
• Operating Temperature175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeP-Channel
• Current - Continuous Drain (Id) @ 25°C83A (Tc)
• Rds On (Max) @ Id, Vgs8.8mOhm @ 41.5A, 10V
• Power Dissipation (Max)1.8W (Ta), 150W (Tc)
• Vgs(th) (Max) @ Id2.5V @ 1mA
• Supplier Device PackageTO-263
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)60 V
• Gate Charge (Qg) (Max) @ Vgs190 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds10100 pF @ 10 V

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• QC PROCESS
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