• IR (Infineon Technologies)
• IPA60R190P6XKSA1
• Discrete Semiconductor Products
• MOSFET N-CH 600V 20.2A TO220-FP
•  IPA60R190P6XKSA1 Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 600 V 20.2A (Tc) 34W (Tc) Through Hole PG-TO220-FP
• Package / CaseTO-220-3 Full Pack
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
• Rds On (Max) @ Id, Vgs190mOhm @ 7.6A, 10V
• Power Dissipation (Max)34W (Tc)
• Vgs(th) (Max) @ Id4.5V @ 630µ
• Supplier Device PackagePG-TO220-FP
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1750 pF @ 100 V

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• RFQ
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• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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