• Littelfuse / IXYS RF
• IXTA1R4N120P
• Discrete Semiconductor Products
• MOSFET N-CH 1200V 1.4A TO263
•  IXTA1R4N120P Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerLittelfuse / IXYS RF
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 1200 V 1.4A (Tc) 86W (Tc) Surface Mount TO-263AA
• Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
• Rds On (Max) @ Id, Vgs13Ohm @ 500mA, 10V
• Power Dissipation (Max)86W (Tc)
• Vgs(th) (Max) @ Id4.5V @ 100µA
• Supplier Device PackageTO-263AA
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)1200 V
• Gate Charge (Qg) (Max) @ Vgs24.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds666 pF @ 25 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT