• Roving Networks (Microchip Technology)
• APT28M120L
• Discrete Semiconductor Products
• MOSFET N-CH 1200V 29A TO264
•  APT28M120L Datasheet
• 

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• AttributesAttribute Value
• ManufacturerRoving Networks (Microchip Technology)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity25
• DescriptionN-Channel 1200 V 29A (Tc) 1135W (Tc) Through Hole TO-264 [L]
• Package / CaseTO-264-3, TO-264AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C29A (Tc)
• Rds On (Max) @ Id, Vgs530mOhm @ 14A, 10V
• Power Dissipation (Max)1135W (Tc)
• Vgs(th) (Max) @ Id5V @ 2.5mA
• Supplier Device PackageTO-264 [L]
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)1200 V
• Gate Charge (Qg) (Max) @ Vgs300 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds9670 pF @ 25 V

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• QC PROCESS
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