• STMicroelectronics
• STW58N65DM2AG
• Discrete Semiconductor Products
• MOSFET N-CH 650V 48A TO247
•  STW58N65DM2AG Datasheet
• 

• Cost
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• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerSTMicroelectronics
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 650 V 48A (Tc) 360W (Tc) Through Hole TO-247-3
• Package / CaseTO-247-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C48A (Tc)
• Rds On (Max) @ Id, Vgs65mOhm @ 24A, 10V
• Power Dissipation (Max)360W (Tc)
• Vgs(th) (Max) @ Id5V @ 250µA
• Supplier Device PackageTO-247-3
• GradeAutomotive
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±25V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 100 V
• QualificationAEC-Q101

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• RFQ
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• QC PROCESS
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