• STMicroelectronics
• STWA30N65DM6AG
• Single FETs, MOSFETs
• MOSFET N-CH 650V 28A TO247
•  STWA30N65DM6AG Datasheet
• 

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• AttributesAttribute Value
• ManufacturerSTMicroelectronics
• CategorySingle FETs, MOSFETs
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 650 V 28A (Tc) 284W (Tc) Through Hole TO-247 Long Leads
• Package / CaseTO-247-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C28A (Tc)
• Rds On (Max) @ Id, Vgs110mOhm @ 14A, 10V
• Power Dissipation (Max)284W (Tc)
• Vgs(th) (Max) @ Id4.75V @ 250μA
• Supplier Device PackageTO-247 Long Leads
• GradeAutomotive
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±25V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 100 V
• QualificationAEC-Q101

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• QUOTE
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• QC PROCESS
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