• Texas Instruments
• CSD18511KCS
• Discrete Semiconductor Products
• MOSFET N-CH 40V 194A TO220-3
•  CSD18511KCS Datasheet
• 

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• AttributesAttribute Value
• ManufacturerTexas Instruments
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 40 V 194A (Ta) 188W (Ta) Through Hole TO-220-3
• Package / CaseTO-220-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C194A (Ta)
• Rds On (Max) @ Id, Vgs2.6mOhm @ 100A, 10V
• Power Dissipation (Max)188W (Ta)
• Vgs(th) (Max) @ Id2.4V @ 250µA
• Supplier Device PackageTO-220-3
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)40 V
• Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds5940 pF @ 20 V

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