• Vishay / Siliconix
• SIHB25N50E-GE3
• Discrete Semiconductor Products
• MOSFET N-CH 500V 26A TO263
•  SIHB25N50E-GE3 Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity1000
• DescriptionN-Channel 500 V 26A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
• Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C26A (Tc)
• Rds On (Max) @ Id, Vgs145mOhm @ 12A, 10V
• Power Dissipation (Max)250W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-263 (D2PAK)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)500 V
• Gate Charge (Qg) (Max) @ Vgs86 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1980 pF @ 100 V

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• RFQ
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• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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