• YAGEO XSEMI
• XP60SL115DR
• Discrete Semiconductor Products
• MOSFET N-CH 600V 28A TO262
•  XP60SL115DR Datasheet
• 

• Cost
  Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerYAGEO XSEMI
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 600 V 28A (Tc) 2W (Ta), 178W (Tc) Through Hole TO-262
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C28A (Tc)
• Rds On (Max) @ Id, Vgs115mOhm @ 9.6A, 10V
• Power Dissipation (Max)2W (Ta), 178W (Tc)
• Vgs(th) (Max) @ Id5V @ 250µA
• Supplier Device PackageTO-262
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds5120 pF @ 100 V

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• QC PROCESS
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