• Zetex Semiconductors (Diodes Inc.)
• DMT10H9M9LCT
• Discrete Semiconductor Products
• MOSFET BVDSS: 61V~100V TO220AB T
•  DMT10H9M9LCT Datasheet
• 

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• AttributesAttribute Value
• ManufacturerZetex Semiconductors (Diodes Inc.)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 100 V 101A (Tc) 2.3W (Ta), 156W (Tc) Through Hole TO-220-3
• Package / CaseTO-220-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C101A (Tc)
• Rds On (Max) @ Id, Vgs8.5mOhm @ 20A, 10V
• Power Dissipation (Max)2.3W (Ta), 156W (Tc)
• Vgs(th) (Max) @ Id2.5V @ 250µA
• Supplier Device PackageTO-220-3
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs40.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds2309 pF @ 50 V

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