• GeneSiC Semiconductor
• G3R350MT12D
• Discrete Semiconductor Products
• SIC MOSFET N-CH 11A TO247-3
•  G3R350MT12D Datasheet
• 

• Cost
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• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerGeneSiC Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 1200 V 11A (Tc) 74W (Tc) Through Hole TO-247-3
• Package / CaseTO-247-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologySiCFET (Silicon Carbide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C11A (Tc)
• Rds On (Max) @ Id, Vgs420mOhm @ 4A, 15V
• Power Dissipation (Max)74W (Tc)
• Vgs(th) (Max) @ Id2.69V @ 2mA
• Supplier Device PackageTO-247-3
• Drive Voltage (Max Rds On, Min Rds On)15V
• Vgs (Max)±15V
• Drain to Source Voltage (Vdss)1200 V
• Gate Charge (Qg) (Max) @ Vgs12 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds334 pF @ 800 V

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