• Texas Instruments
• CSD18535KTT
• Discrete Semiconductor Products
• MOSFET N-CH 60V 200A DDPAK
•  CSD18535KTT Datasheet
• 

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• AttributesAttribute Value
• ManufacturerTexas Instruments
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity500
• DescriptionN-Channel 60 V 200A (Ta) 300W (Tc) Surface Mount TO-263 (DDPAK-3)
• Package / CaseTO-263-4, D2PAK (3 Leads + Tab), TO-263AA
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C200A (Ta)
• Rds On (Max) @ Id, Vgs2mOhm @ 100A, 10V
• Power Dissipation (Max)300W (Tc)
• Vgs(th) (Max) @ Id2.4V @ 250µA
• Supplier Device PackageTO-263 (DDPAK-3)
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)60 V
• Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds6620 pF @ 30 V

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